IRHNB7264SE

The IRHNB7264SE is a kind of power mosfet made under the rad hard HEXFET techology which possessing the features of Single Event Effect (SEE) Hardened, Ultra Low Rosianp, Low Total Gate Charge, Proton Tolerant, Simple Drive Requirements, Ease of Paralleling, Hermetically Sealed, Surface Mount, Light Weight. And the International Rectifier's RADHard HEXFET MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects The combination of low Rostom and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

The parameters of the IRHNB7264SE are VGS (Gate-to-Source Voltage)=±20V, ID @ Tc= 25°C  (Continuous Drain Current, VGS @ 12V)=34A, ID @ Tc = 100°C (Continuous Drain Current, VGS @12V)=21A, IDM (Pulsed Drain Current)=136A, EAS (Single Pulse Avalanche Energy)=500mJ, PD (@Tc= 25°C Power Dissipation)=300W, IAR( Avalanche Current)=30A, IAR(avalanche current)=34A, EAR (Repetitive Avalanche Energy)=30mJ, dv/dt( Peak Diode Recovery dv/dt) =2.5V/ns, TJ (Operating Junction and)= -55 to + 150°C=TSTG( Storage Temperature Range), (Soldering Temperature, for 5 seconds )=300 (3.3g )°C, RJC( Junction-to-Case )=0.42(max)°C/W, RthJ-PCB(Junction-to-PC board)=1.6(typ)°C/W(soldered to a 1 inch aquare clad PC board).