Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Surface MountLight WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current ...
IRHNB7160: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Surface MountLight W...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 51 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 32.5 | |
IDM | Pulsed Drain Current | 204 | |
PD @ TC = 25 | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.4 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 51 | A |
EAR | Repetitive Avalanche Energy | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 7.3 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
Weight | 3.5 (Typical) | g |
International Rectifier's RADHard HEXFET® technology IRHNA9160 provides high performance power MOSFETs for space applications. This technology IRHNA9160 has over a decade of proven performance and reliability in satellite applications. These devices IRHNA9160 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNA9160 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical