IRHNA9160

Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Rating·Dynamic dv/dt Rating·Simple Drive Req...

product image

IRHNA9160 Picture
SeekIC No. : 004378094 Detail

IRHNA9160: Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- a...

floor Price/Ceiling Price

Part Number:
IRHNA9160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/10/30

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Radiation Hardened up to 1 x 105 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight



Specifications

  Parameter IRHNA9160 Units
ID @ VGS = 12V, TC = 25V Continuous Drain Current -38 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current -24
IDM Pulsed Drain Current -152
PD @ TC = 25 Max. Power Dissipation 300 W
  Linear Derating Factor 2.4 W/K
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current -38 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt -5.5 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
  Package Mounting Surface Temperature 300 (for 5 sec.)
  Weight 3.3 (Typical) g



Description

International Rectifier's P-Channel RAD HARD technology HEXFETs IRHNA9160  demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier's P-Channel RAD HARD HEXFETs IRHNA9160  retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices IRHNA9160  are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds.

Single Event Effect (SEE) testing of International Rectifier's P-Channel RAD HARD HEXFETs IRHNA9160  has demonstrated virtual immunity to SEE failure. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

P- Channel RAD HARD HEXFET transistors IRHNA9160  also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Isolators
Semiconductor Modules
Resistors
LED Products
Audio Products
View more