Features: ·Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Rating·Dynamic dv/dt Rating·Simple Drive Req...
IRHNA8260: Features: ·Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- a...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | IRHNA7260, IRHNA8260 | Units | |
ID @ VGS = 12V, TC = 25V | Continuous Drain Current | 43 | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 27 | |
IDM | Pulsed Drain Current | 174 | |
PD @ TC = 25 | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.4 | W/K | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 43 | A |
EAR | Repetitive Avalanche Energy | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 5.0 | V/ns |
TJ TSTG |
Operating JunctionStorage Temperature Range | -55 to 150 | |
Package Mounting Surface Temperature | 300 (for 5 sec.) | ||
Weight | 3.3 (Typical) | g |
International Rectifier's RAD HARD technology HEXFETs IRHNA8260 demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier's RAD HARD HEXFETs IRHNA8260 retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices IRHNA8260 are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors IRHNA8260 also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.