Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous...
IRHNA7Z60: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Surface Mount·Ceramic Package·Light ...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 75* | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 75* | A |
IDM | Pulsed Drain Current ➀ | 300 | A |
PD @ TC = 25°C | Max. Power Dissipation | 300 | W |
Linear Derating Factor | 2.4 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 500 | mJ |
IAR | Avalanche Current ➀ | 75 | A |
EAR | Repetitive Avalanche Energy ➀ | 30 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 0.35 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (for 5s) | ||
Weight | 3.3 (Typical ) | g |