IRHNA7160

Features: ·Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Rating·Dynamic dv/dt Rating·Simple Drive Req...

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SeekIC No. : 004378084 Detail

IRHNA7160: Features: ·Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened·Single Event Gate Rupture (SEGR) Hardened·Gamma Dot (Flash X-Ray) Hardened·Neutron Tolerant·Identical Pre- a...

floor Price/Ceiling Price

Part Number:
IRHNA7160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

·Radiation Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
·Single Event Gate Rupture (SEGR) Hardened
·Gamma Dot (Flash X-Ray) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Rating
·Dynamic dv/dt Rating
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Surface Mount
·Lightweight



Specifications

  Parameter IRHNA7160, IRHNA8160 Units
ID @ VGS = 12V, TC = 25V Continuous Drain Current 51 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 32.5
IDM Pulsed Drain Current 204
PD @ TC = 25 Max. Power Dissipation 300 W
  Linear Derating Factor 2.0 W/K
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 51 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 5.5 V/ns
TJ
TSTG
Operating JunctionStorage Temperature Range -55 to 150
  Package Mounting Surface Temperature 300 (for 5 sec.)
  Weight 3.3 (Typical) g



Description

International Rectifier IRHNA7160's RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier IRHNA7160's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices IRHNA7160 are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors IRHNA7160 also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.




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