Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 CContinuous...
IRHNA67264: Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Surface Mount ·Ceramic Package...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter |
Units | ||
ID @ VGS=-12V,TC=25 |
CContinuous Drain Curren |
50 |
A |
ID @ VGS=-12V,TC=100 |
CContinuous Drain Curren |
31.5 | |
IDM |
Pulsed Drain Current |
200 | |
PD@ TC= 25 |
CMax. Power Dissipatio |
250 |
W |
Linear Derating Factor |
2.0 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
240 |
mJ |
IAR |
Avalanche Current |
50 |
A |
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
4.1 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300(for 5s ) | ||
Weight |
3.3( Typical ) |
g |
International Rectifier IRHNA67264'R6TM technology provides superior power MOSFETs for space applications.These devices IRHNA67264have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHNA67264 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.