Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25ID @ VGS = 12V, TC ...
IRHNA67164: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 ID @ VGS = 12V, TC = 100 IDM |
Continuous Drain Current Continuous Drain Current Pulsed Drain Current |
56* 49 224 |
A |
PD @ TC = 25 | Max. Power Dissipation | 250 | W |
Linear Derating Factor | 2.0 | W/ | |
VGS EAS IAR |
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current |
±20 283 56 |
V mJ A |
EAR dv/dt |
Repetitive Avalanche Energy Peak Diode Recovery dv/dt |
25 7.5 |
mJ V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Pckg. Mounting Surface Temp. | 300 (for 5s) | ||
Weight | 3.3 (Typical) | g |
For footnotes refer to the last page
International Rectifier IRHNA67164's R6TM technology provides superior power MOSFETs for space applications. These devices IRHNA67164 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHNA67164 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.