IRHNA67164

Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25ID @ VGS = 12V, TC ...

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SeekIC No. : 004378080 Detail

IRHNA67164: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package...

floor Price/Ceiling Price

Part Number:
IRHNA67164
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

·Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25

ID @ VGS = 12V, TC = 100

IDM
Continuous Drain Current

Continuous Drain Current

Pulsed Drain Current
56*

49

224
A
PD @ TC = 25 Max. Power Dissipation 250 W
  Linear Derating Factor 2.0 W/
VGS

EAS

IAR
Gate-to-Source Voltage

Single Pulse Avalanche Energy

Avalanche Current
±20

283

56
V

mJ

A
EAR

dv/dt
Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
25

7.5
mJ

V/ns
TJ

TSTG
Operating Junction

Storage Temperature Range
-55 to 150


  Pckg. Mounting Surface Temp. 300 (for 5s)
  Weight 3.3 (Typical) g

For footnotes refer to the last page




Description

International Rectifier IRHNA67164's R6TM technology provides superior power MOSFETs for space applications. These devices IRHNA67164 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2). Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHNA67164 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.




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