Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25ID @ VGS = 12V, TC ...
IRHNA63260: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25 ID @ VGS = 12V, TC = 100 IDM |
Continuous Drain Current Continuous Drain Current Pulsed Drain Current |
56* 40 224 |
A |
PD @ TC = 25 | Max. Power Dissipation | 250 | W |
Linear Derating Factor | 2.0 | W/ | |
VGS EAS IAR |
Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current |
±20 268 56* |
V mJ A |
EAR dv/dt |
Repetitive Avalanche Energy Peak Diode Recovery dv/dt |
25 5.0 |
mJ V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Pckg. Mounting Surface Temp. | 300 (for 5s) | ||
Weight | 3.3 (Typical) |
International Rectifier IRHNA63260's R6TM technology provides superior power MOSFETs for space applications. These devices IRHNA63260 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHNA63260 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.