IRHNA597260

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ...

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IRHNA597260 Picture
SeekIC No. : 004378076 Detail

IRHNA597260: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

floor Price/Ceiling Price

Part Number:
IRHNA597260
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/10/30

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight



Specifications

 
Parameter
Units
ID @ VGS = -12V, TC = 25°C
Continuous Drain Current
-35.5
A
ID @ VGS = -12V, TC = 100°C
Continuous Drain Current
-22.5
IDM
Pulsed Drain Current ➀
-142
PD @ TC = 25°C
Max. Power Dissipation
300
W
Linear Derating Factor
2.4
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
320
mJ
IAR
Avalanche Current ➀
-35.5
A
EAR
Repetitive Avalanche Energy ➀
30
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
10
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
°C
Pckg. Mounting Surface Temp.
300 ( for 5s )
Weight
3.3 ( Typical )
g



Description

International Rectifier IRHNA597260's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHNA597260 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHNA597260 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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