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IRHNA57Z60

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°...

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SeekIC No. : 004378074 Detail

IRHNA57Z60: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount·Ceramic ...

IRHNA57Z60 Data Sheet

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Part Number:
IRHNA57Z60
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
·Ceramic Package
·Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 75* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 75* A
IDM Pulsed Drain Current ➀ 300 A
PD @ TC = 25°C Max. Power Dissipation 300 W
  Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 500 mJ
IAR Avalanche Current ➀ 75 A
EAR Repetitive Avalanche Energy ➀ 30 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 0.83 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (for 5s)
  Weight 3.3 (Typical ) g



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