IRHNA57260

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continu...

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IRHNA57260 Picture
SeekIC No. : 004378071 Detail

IRHNA57260: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

floor Price/Ceiling Price

Part Number:
IRHNA57260
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 55 A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 35 A
IDM Pulsed Drain Current 220 A
PD @ TC = 25°C Max. Power Dissipation 300 W
  Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 380 mJ
IAR Avalanche Current 55 A
EAR Repetitive Avalanche Energy 30 mJ
dv/dt Peak Diode Recovery dv/dt 9.2 V/ns
TJ Operating Junction -55 to 150 oC
TSTG Storage Temperature Range   oC
  Pckg. Mounting Surface Temp. 300 (for 5s) oC
  Weight 3.3 (Typical) g



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