IRHNA57163SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Contin...

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IRHNA57163SE Picture
SeekIC No. : 004378070 Detail

IRHNA57163SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic...

floor Price/Ceiling Price

Part Number:
IRHNA57163SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/10/30

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current 75* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current 62 A
IDM Pulsed Drain Current ➀ 300 A
PD @ TC = 25°C Max. Power Dissipation 300 W
  Linear Derating Factor 2.4 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 280 mJ
IAR Avalanche Current ➀ 75 A
EAR Repetitive Avalanche Energy ➀ 30 mJ
dv/dt Peak Diode Recovery dv/dt ➂ 5.5 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature 300 (for 5s)
  Weight 3.3 (Typical ) g



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