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IRHNA57160

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current...

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SeekIC No. : 004378069 Detail

IRHNA57160: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Ceramic Package· Light W...

IRHNA57160 Data Sheet

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Part Number:
IRHNA57160
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 75 A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 69 A
IDM Pulsed Drain Current 300 A
PD @ TC = 25°C Max. Power Dissipation 250 W
  Linear Derating Factor 2.0 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 363 mJ
IAR Avalanche Current 75 A
EAR Repetitive Avalanche Energy 25 mJ
dv/dt Peak Diode Recovery dv/dt 6.0 V/ns
TJ Operating Junction -55 to 150 oC
TSTG Storage Temperature Range   oC
  Pckg. Mounting Surface Temp. 300 (for 5s) oC
  Weight 3.3(Typical) g



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