Features: · Radiation Hardened up to 3 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Rating·Dynamic dv/dt Rating· Simple Dr...
IRHN93150: Features: · Radiation Hardened up to 3 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant·Identical P...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | -22 | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | -14 | A |
IDM | Pulsed Drain Current ➀ | -88 | A |
PD @ TC = 25°C | Max. Power Dissipation | 150 | W |
Linear Derating Factor | 1.2 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 500 | mJ |
IAR | Avalanche Current ➀ | -22 | A |
EAR | Repetitive Avalanche Energy ➀ | 15 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | -23 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | oC |
Lead Temperature | 300 (0.063 in. (1.6mm) from case for 10 sec.) |
oC | |
Weight | 2.6 (Typical ) | g |