IRHN9130

International Rectifier IRHN9130 's P-channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 105 Rads (Si). Under identical pre- and post-radiation test conditions, International Rectifier IRHN9130 's P-channel RAD HARD HEXFETs retain identical electrical specifications up to 1 x 10⁵ Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices IRHN9130 are also capable of surviving transient ionization pulses as high as 1 x 10¹² Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect, (SEE), testing of International Rectifier 's P-channel RAD HARD HEXFETs has demonstrated virtual immunity to SEE failure. Since the P-channel RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

P-channel RAD HARD HEXFET transistors IRHN9130 also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits in space and weapons environments.