Features: · Radiation Hardened up to 1 x 106 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Rating· Dynamic dv/dt Rating· Simple ...
IRHN8450: Features: · Radiation Hardened up to 1 x 106 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical ...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 11 | A |
ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 7.0 | A |
IDM | Pulsed Drain Current | 44 | A |
PD @ TC = 25°C | Max. Power Dissipation | 150 | W |
Linear Derating Factor | 1.2 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 500 | mJ |
IAR | Avalanche Current | 11 | A |
EAR | Repetitive Avalanche Energy | 15 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
TJ | Operating Junction | -55 to 150 | oC |
TSTG | Storage Temperature Range | oC | |
Pckg. Mounting Surface Temp. | 300 (for 5s) | oC | |
Weight | 2.6 (Typical) | g |