Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain Curren...
IRHN7250SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Surface Mount· Light W...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25°C | Continuous Drain Current | 26 | A |
ID @ VGS = -12V, TC = 100°C | Continuous Drain Current | 16 | A |
IDM | Pulsed Drain Current ➀ | 104 | A |
PD @ TC = 25°C | Max. Power Dissipation | 150 | W |
Linear Derating Factor | 1.2 | W/°C | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy ➁ | 500 | mJ |
IAR | Avalanche Current ➀ | 26 | A |
EAR | Repetitive Avalanche Energy ➀ | 15 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 5.9 | V/ns |
TJ,TSTG | Operating Junction Storage Temperature Range |
-55 to 150 | oC |
Lead Temperature | 300 for 5 sec) | oC | |
Weight | 2.6 (Typical ) | g |