Features: · Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Rating· Dynamic dv/dt Rating· Simple D...
IRHN7150: Features: · Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical P...
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Features: · Radiation Hardened up to 1 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Singl...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton T...
Parameter |
IRHN7150, IRHN8150 |
Units | |
ID @ VGS = 12V, TC = 25°C | Continuous Drain Current |
34 |
A |
ID @ VGS = 12V, TC = 100°C | Continuous Drain Current |
21 | |
IDM |
Pulsed Drain Current |
136 | |
PD @ TC = 25°C |
Max. Power Dissipation |
150 |
W |
Linear Derating Factor |
1.2 |
W/K | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
500 |
mJ |
IAR |
Avalanche Current |
34 |
A |
EAR |
Repetitive Avalanche Energy |
15 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.5 |
V/ns |
TJ TSTG |
Operating Junction |
-55 to 150 |
|
Package Mounting Surface Temperature |
300 (for 5 sec.) | ||
Weight |
2.6 (Typical) |
g |
International Rectifier IRHN7150's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, International Rectifier IRHN7150's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices IRHN7150 are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs IRHN7150 has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.
RAD HARD HEXFET transistors IRHN7150 also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.
They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weapons environments.