IRHN7150

Features: · Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Rating· Dynamic dv/dt Rating· Simple D...

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SeekIC No. : 004378051 Detail

IRHN7150: Features: · Radiation Hardened up to 1 x 106 Rads (Si)·Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical P...

floor Price/Ceiling Price

Part Number:
IRHN7150
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

· Radiation Hardened up to 1 x 106 Rads (Si)
·Single Event Burnout (SEB) Hardened
· Single Event Gate Rupture (SEGR) Hardened
· Gamma Dot (Flash X-Ray) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Surface Mount
· Light-weight

 




Specifications

 
Parameter
IRHN7150, IRHN8150
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
34
A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
21
IDM
Pulsed Drain Current
136
PD @ TC = 25°C
Max. Power Dissipation
150
W
Linear Derating Factor
1.2
W/K
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy
500
mJ
IAR
Avalanche Current
34
A
EAR
Repetitive Avalanche Energy
15
mJ
dv/dt
Peak Diode Recovery dv/dt
5.5
V/ns
TJ
TSTG

Operating Junction
Storage Temperature Range

-55 to 150
  Package Mounting Surface Temperature
300 (for 5 sec.)
  Weight
2.6 (Typical)
g



Description

International Rectifier IRHN7150's MEGA RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation doses as high as 1 x 106 Rads (Si). Under identical preand post-radiation test conditions, International Rectifier IRHN7150's RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. At 1 x 106 Rads (Si) total dose, under the same pre-dose conditions, only minor shifts in the electrical specifications are observed and are so specified in table 1. No compensation in gate drive circuitry is required. In addition, these devices IRHN7150 are capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Single Event Effect (SEE) testing of International Rectifier RAD HARD HEXFETs IRHN7150 has demonstrated virtual immunity to SEE failure. Since the MEGA RAD HARD process utilizes International Rectifier's patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors IRHN7150 also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, ease of paralleling and temperature stability of the electrical parameters.

They are well-suited for applications such as switching power supplies, motor controls, inverters, choppers, audio
amplifiers and high-energy pulse circuits in space and weapons environments.




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