Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 ...
IRHMS67264: Features: ·Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically ...
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Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single E...
Parameter |
Units | ||
ID @ VGS = 12V, TC = 25 |
Continuous Drain Current |
45 |
A |
ID @ VGS = 12V, TC = 100 |
Continuous Drain Current |
28.5 | |
IDM |
Pulsed Drain Current |
180 | |
PD @ TC = 25 |
Max. Power Dissipation |
208 |
W |
Linear Derating Factor |
1.67 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
251 |
mJ |
IAR |
Avalanche Current |
45 |
A |
EAR |
Repetitive Avalanche Energy |
20.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-6.0 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300 (0.063 in. /1.6 mm from case for 10s) | ||
Weight |
9.3 (Typical) |
g |
For footnotes refer to the last page
International Rectifier IRHMS67264's R6TM technology provides superior power MOSFETs for space applications. These devices IRHMS67264 have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).
Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today's high speed switching applications such as DC-DC converters and motor controllers. These devices IRHMS67264 retain all of the well established advantages of MOSFETs such as voltage control, ease of paralleling and temperature stability of electrical parameters.