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IRHM3054

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35...

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SeekIC No. : 004377999 Detail

IRHM3054: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...

IRHM3054 Data Sheet

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Part Number:
IRHM3054
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35* A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 30 A
IDM Pulsed Drain Current 140 A
PD @ TC = 25°C Max. Power Dissipation 150 W
  Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 35 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150 °C
  Lead Temperature 300 (0.063 in.(1.6mm) from case for 10s) °C
  Weight 9.3 (Typical ) g



Description

International Rectifier's RADHard HEXFET® technology IRHM3054 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM3054 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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