Position: Home  > All Categories> Integrated Circuits (ICs) > IRHM3054

IRHM3054

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35...

product image

IRHM3054 Picture
See larger image
SeekIC No. : 004377999 Detail

IRHM3054: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...

IRHM3054 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRHM3054
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/9/16

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current 35* A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current 30 A
IDM Pulsed Drain Current 140 A
PD @ TC = 25°C Max. Power Dissipation 150 W
  Linear Derating Factor 1.2 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 35 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 3.5 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150 °C
  Lead Temperature 300 (0.063 in.(1.6mm) from case for 10s) °C
  Weight 9.3 (Typical ) g



Description

International Rectifier's RADHard HEXFET® technology IRHM3054 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM3054 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Resistors
A101G
3006P-1-205LF
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
Integrated Circuits (ICs)
TA8435H
1MB12-140
Discrete Semiconductor Products
T508N12TOF
MUR20040
Cables, Wires - Management
NM-SF50+
CCK26.5-MM-190-30
View more