IRHM4150

International rectifier's RADHard HEXFET technology IRHM4150 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHM4150 have been characterized for both total dose and single event effects. The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM4150 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

The features of IRHM4150 can be summarized as (1)single event effect (SEE) hardened; (2)low RDS(on); (3)low total gate charge; (4)proton tolerant; (5)simple drive requirements; (6)ease of paralleling; (7)hermetically sealed; (8)ceramic eyelets; (9)light weight.

The absolute maximum ratings of IRHM4150 are (1)ID @ VOS = 12V, TC = 25°C continuous drain current: 34A; (2)ID @ VOS = 12V, TC = 100°C continuous drain current: 21 A; (3)pulsed drain current IDM: 136A; (4)PD @ TC = 25°C Max. power dissipation: 150W; (5)linear derating factor: 1.2 W/°C; (6)VGS gate-to-source voltage: ±20; (7)EAS single pulse avalanche energy: 500 mJ; (8)IAR avalanche current: 34 A; (9)EAR repetitive avalanche energy: 15 mJ; (10)dv/dt peak diode recovery dv/dt: 5.5 V/ns; (11)TJ operating junction: -55 to 150°C; (12)TJ TSTG storage temperature range: -55 to 150°C; (13)lead temperature: 300 (0.063 in. (1.6mm) from case for 10s); (14)weight: 9-3(Typical).