Features: Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive RequirementsEase of Paralleling Hermetically Sealed Ceramic Eyelets Electrically IsolatedLight WeightSpecifications Parameter Units ID @ VGS = 10V, TC = 25 tinuous Drain Current...
IRHMS67260: Features: Low RDS(on) Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive RequirementsEase of Paralleling Hermetically Sealed Ceramic Eyelets Electrically IsolatedLi...
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Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single E...
Parameter | Units | ||
ID @ VGS = 10V, TC = 25 | tinuous Drain Current |
45* |
A |
ID @ VGS = 10V, TC = 100 | Continuous Drain Current |
35 | |
IDM | Pulsed Drain Current |
180 | |
PD @ TC = 25 | Max. Power Dissipation |
208 |
W |
Linear Derating Factor |
1.67 |
W/ | |
VGS | Gate-to-Source Voltage |
±20 |
V |
EAS | Single Pulse Avalanche Energy |
344 |
mJ |
IAR | Avalanche Current |
45 |
A |
EAR | Repetitive Avalanche Energy |
20.8 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
5.4 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Package Mounting Surface Temperature |
300 (0.063 in. /1.6 mm from case for 10s) | ||
Weight |
9.3 (Typical) |
g |