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IRHMS597Z60

Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Conti...

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IRHMS597Z60: Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

IRHMS597Z60 Data Sheet

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Part Number:
IRHMS597Z60
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

··Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight


Specifications

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -45* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -45*
IDM Pulsed Drain Current -180
PD @ TC = 25°C Max. Power Dissipation 208 W
  Linear Derating Factor 1.67 W/°C
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 1250 mJ
IAR Avalanche Current -45 A
EAR Repetitive Avalanche Energy 20.8 mJ
dv/dt Peak Diode Recovery dv/dt -0.6 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
  Lead Temperature 300 (0.063in./1.6mm from case for 10s)
  Weight 9.3 ( Typical ) g



Description

International Rectifier IRHMS597Z60 's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMS597Z60 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMS597Z60 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

 




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