IRHMS597160

Features: ·Single Event Effect (SEE) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Electically Isolated·Ceramic Eyelets·Light Weight·High Electrical C...

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SeekIC No. : 004378041 Detail

IRHMS597160: Features: ·Single Event Effect (SEE) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings·Simple Drive Requirements·Ease of...

floor Price/Ceiling Price

Part Number:
IRHMS597160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight
·High Electrical Conductive Package



Specifications

Parameter   Units
ID @ VGS = -12V, TC = 25 Continuous Drain Current -45* A
ID @ VGS = -12V, TC = 100 Continuous Drain Current -30
IDM Pulsed Drain Current -180
PD @ TC = 25 Max. Power Dissipation 208 W
Linear Derating Factor 1.67 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 480 mJ
IAR Avalanche Current -45 A
EAR Repetitive Avalanche Energy 20.8 mJ
dv/dt Peak Diode Recovery dv/dt -6.0 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 9.3 (Typical) g



Description

International Rectifier IRHMS597160's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMS597160 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMS597160 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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