Features: ·Single Event Effect (SEE) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Electically Isolated·Ceramic Eyelets·Light Weight·High Electrical C...
IRHMS597160: Features: ·Single Event Effect (SEE) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings·Simple Drive Requirements·Ease of...
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Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single E...
Parameter | Units | ||
ID @ VGS = -12V, TC = 25 | Continuous Drain Current | -45* | A |
ID @ VGS = -12V, TC = 100 | Continuous Drain Current | -30 | |
IDM | Pulsed Drain Current | -180 | |
PD @ TC = 25 | Max. Power Dissipation | 208 | W |
Linear Derating Factor | 1.67 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 480 | mJ |
IAR | Avalanche Current | -45 | A |
EAR | Repetitive Avalanche Energy | 20.8 | mJ |
dv/dt | Peak Diode Recovery dv/dt | -6.0 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Lead Temperature | 300 (0.063 in./1.6mm from case for 10s) | ||
Weight | 9.3 (Typical) | g |
International Rectifier IRHMS597160's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMS597160 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMS597160 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.