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IRHMS597064

Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Symbol Parameter Max. Units VDS Drain- Source Volt...

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SeekIC No. : 004378040 Detail

IRHMS597064: Features: · Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

IRHMS597064 Data Sheet

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Part Number:
IRHMS597064
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Features:

· Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight


Specifications

Symbol Parameter Max. Units
VDS Drain- Source Voltage 130 V
ID @ TA= 25 Continuous Drain Current, VGS @ -4.5V -5.6 A
ID @ TA= 100 Continuous Drain Current, VGS @ -4.5V -4.5 A
IDM Pulsed Drain Current -45 A
PD @ TA = 25 Power Dissipation 2.0 W
PD @ TA = 70 Power Dissipation 1.3 W
  Linear Derating Factor 0.016 W/
EAS Single Pulse Avalanche Energy 34 mJ
VGS Gate-to-Source Voltage ± 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150



Description

International Rectifier IRHMS597064's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMS597064 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMS597064 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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