Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuo...
IRHMS57163SE: Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...
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Parameter | Units | ||
ID @ VGS = 12V, TC = 25 | Continuous Drain Current | 45* | A |
ID @ VGS = 12V, TC = 100 | Continuous Drain Current | 45* | |
IDM | Pulsed Drain Current | 180 | |
PD @ TC = 25 | Max. Power Dissipation | 208 | W |
Linear Derating Factor | 1.67 | W/ | |
VGS | Gate-to-Source Voltage | ±20 | V |
EAS | Single Pulse Avalanche Energy | 432 | mJ |
IAR | Avalanche Current | 45 | A |
EAR | Repetitive Avalanche Energy | 20.8 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 11.3 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | |
Package Mounting Surface Temperature | 300 (0.063 in.(1.6 mm from case for 10s)) | ||
Weight | 9.3 (Typical ) | g |
International Rectifier IRHMS57163SE 's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMS57163SE have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMS57163SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.