IRHMS57163SE

Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically Isolated· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuo...

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SeekIC No. : 004378037 Detail

IRHMS57163SE: Features: ··Low RDS(on)· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Eyelets· Electrically...

floor Price/Ceiling Price

Part Number:
IRHMS57163SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/30

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Product Details

Description



Features:

··Low RDS(on)
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Eyelets
· Electrically Isolated
· Light Weight



Specifications

  Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 45* A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 45*
IDM Pulsed Drain Current 180
PD @ TC = 25 Max. Power Dissipation 208 W
  Linear Derating Factor 1.67 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 432 mJ
IAR Avalanche Current 45 A
EAR Repetitive Avalanche Energy 20.8 mJ
dv/dt Peak Diode Recovery dv/dt 11.3 V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
  Package Mounting Surface Temperature 300 (0.063 in.(1.6 mm from case for 10s))
  Weight 9.3 (Typical ) g
* Current is limited by package


Description

International Rectifier IRHMS57163SE  's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMS57163SE  have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMS57163SE  retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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