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IRHMK57260SE

Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Eyelets ·Electrically Isolated ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 CCo...

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SeekIC No. : 004378034 Detail

IRHMK57260SE: Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Eyelets ·Electrically ...

IRHMK57260SE Data Sheet

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Part Number:
IRHMK57260SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Low RDS(on)   
·Fast Switching   
·Single Event Effect (SEE) Hardened 
·Low Total Gate Charge 
·Simple Drive Requirements 
·Ease of Paralleling 
·Hermetically Sealed 
·Ceramic Eyelets 
·Electrically Isolated 
·Light Weight


Specifications
Parameter
Units
ID @ VGS=-12V,TC=25
 CContinuous Drain Curren
45
A
ID@VGS=-12V,TC=100
 CContinuous Drain Curren
29
IDM
 Pulsed Drain Current
180
PD@ TC= 25
 CMax. Power Dissipatio
208
W
 Linear Derating Factor
1.67
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
256
mJ
IAR
 Avalanche Current
45
A
EAR
 Repetitive Avalanche Energy
20.8
mJ
dv/dt
 Peak Diode Recovery dv/dt
19.8
V/nS
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300(for 5s )
 Weight
8.0 ( Typical )
g



Description

International Rectifier IRHMK57260SE's R5TM  technology provides high performance power MOSFETs for space applications.  These devices IRHMK57260SE have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)).  The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.  These devices IRHMK57260SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching,ease of paralleling and temperature stability of electrical parameters.




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