Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Eyelets ·Electrically Isolated ·Light WeightSpecifications Parameter Units ID @ VGS=-12V,TC=25 Con...
IRHMB57260SE: Features: ·Low RDS(on) ·Fast Switching ·Single Event Effect (SEE) Hardened ·Low Total Gate Charge ·Simple Drive Requirements ·Ease of Paralleling ·Hermetically Sealed ·Ceramic Eyelets ·Electrically ...
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Features: ·Radiation Hardened up to 1 x 105 Rads (Si)·Single Event Burnout (SEB) Hardened·Single E...
Parameter |
Units | ||
ID @ VGS=-12V,TC=25 |
Continuous Drain Curren |
45 |
A |
ID @ VGS=-12V,TC=100 |
Continuous Drain Curren |
29 | |
IDM |
Pulsed Drain Current |
180 | |
PD@ TC= 25 |
CMax. Power Dissipatio |
208 |
W |
Linear Derating Factor |
1.67 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
256 |
mJ |
IAR |
Avalanche Current |
45 |
A |
EAR |
Repetitive Avalanche Energy |
20.8 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
19.8 |
V/nS |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Lead Temperature |
300 (0.063 in.(1.6 mm from case for 10s)) | ||
Weight |
8.0 (Typical) |
g |
International Rectifier IRHMB57260SE's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHMB57260SE have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHMB57260SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching,ease of paralleling and temperature stability of electrical parameters.