IRHM93160

Features: · Radiation Hardened up to 3 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Rating· Dynamic dv/dt Rating· Simple ...

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IRHM93160 Picture
SeekIC No. : 004378030 Detail

IRHM93160: Features: · Radiation Hardened up to 3 x 105 Rads (Si)· Single Event Burnout (SEB) Hardened· Single Event Gate Rupture (SEGR) Hardened· Gamma Dot (Flash X-Ray) Hardened· Neutron Tolerant· Identical ...

floor Price/Ceiling Price

Part Number:
IRHM93160
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/10/30

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Product Details

Description



Features:

· Radiation Hardened up to 3 x 105 Rads (Si)
· Single Event Burnout (SEB) Hardened
· Single Event Gate Rupture (SEGR) Hardened
· Gamma Dot (Flash X-Ray) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Rating
· Dynamic dv/dt Rating
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electrically Isolated
· Ceramic Eyelets



Description

  Parameter   Units
ID @ VGS = -12V, TC = 25°C Continuous Drain Current -35* A
ID @ VGS = -12V, TC = 100°C Continuous Drain Current -22 A
IDM Pulsed Drain Current ➀ -140 A
PD @ TC = 25°C Max. Power Dissipation 250 W
  Linear Derating Factor 2.0 W/K
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy ➁ 500 mJ
IAR Avalanche Current ➀ -35* A
EAR Repetitive Avalanche Energy ➀ 25 mJ
dv/dt Peak Diode Recovery dv/dt ➂ -16 V/ns
TJ,TSTG Operating Junction
Storage Temperature Range
-55 to 150 oC
  Lead Temperature 300 ( 0.063 in. (1.6mm) from case for 10s) oC
  Weight 9.3 (typical) g



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