Position: Home  > All Categories> Integrated Circuits (ICs) > IRHM9150

IRHM9150

Features: Single Event Effect (SEE) HardenedLow RDS(on)Low Total Gate ChargeProton TolerantSimple Drive RequirementsEase of ParallelingHermetically SealedSurface MountCeramic PackageLight WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drain ...

product image

IRHM9150 Picture
See larger image
SeekIC No. : 004378025 Detail

IRHM9150: Features: Single Event Effect (SEE) HardenedLow RDS(on)Low Total Gate ChargeProton TolerantSimple Drive RequirementsEase of ParallelingHermetically SealedSurface MountCeramic PackageLight WeightSpec...

IRHM9150 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRHM9150
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic  Package
Light Weight


Specifications


 

Parameter

 

Units

ID @ VGS = -12V, TC = 25°C

Continuous Drain Current

-22

A

ID @ VGS = -12V, TC = 100°C

Continuous Drain Current

-14

IDM

Pulsed Drain Current

-88

PD @ TC = 25°C

Max. Power Dissipation

150

W

 

Linear Derating Factor

1.2

W/°C

VGS

Gate-to-Source Voltage

±20

V

EAS

Single Pulse Avalanche Energy

500

mJ

IAR

Avalanche Current

-22

A

EAR

Repetitive Avalanche Energy

15

mJ

dv/dt

Peak Diode Recovery dv/dt

-23

V/ns

TJ
TSTG

Operating Junction
Storage Temperature Range

-55 to 150


oC

 

Lead Temperature

300 ( 0.063 in. (1.6mm) from case for 10s)

 

Weight

9.3 (typical)

g




Description


International Rectifier IRHM9150's RADHard HEXFETTM technol- ogy provides high performance power MOSFETs for space applications.  This technology IRHM9150 has over a de- cade of proven performance and reliability in satellite applications.  These devices IRHM9150 have been character- ized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.  These devices IRHM9150 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of elec- trical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Filters
PICO2205A
PICO2204A
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
Circuit Protection
A50QS75-4Y
F-17*77
Relays
WIMA MKP4 0.22UF 630V
WIMA MKP4 4.7UF 630VDC
Industrial Controls, Meters
SGDM-15ADA
41AA1600E
View more