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IRHM9130

Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = -12V, TC = 25°C Continuous Drai...

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SeekIC No. : 004378024 Detail

IRHM9130: Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weigh...

IRHM9130 Data Sheet

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Part Number:
IRHM9130
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications
Parameter
Units
ID @ VGS = -12V, TC = 25°C
Continuous Drain Current
-11
A
ID @ VGS = -12V, TC = 100°C
Continuous Drain Current
-7.0
IDM
Pulsed Drain Current ➀
-44
PD @ TC = 25°C
Max. Power Dissipation
75
W
Linear Derating Factor
0.6
W/°C
VGS
Gate-to-Source Voltage
±20
V
EAS
Single Pulse Avalanche Energy ➁
190
mJ
IAR
Avalanche Current ➀
-11
A
EAR
Repetitive Avalanche Energy ➀
7.5
mJ
dv/dt
Peak Diode Recovery dv/dt ➂
-10
V/ns
TJ
TSTG
Operating Junction
Storage Temperature Range
-55 to 150
oC
Lead Temperature
300 ( 0.063 in. (1.6mm) from case for 10s)
Weight
9.3 (typical)
g



Description

International Rectifier IRHM9130 's RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology IRHM9130  has over a decade of proven performance and reliability in satellite applications. These devices IRHM9130  have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM9130 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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