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IRHM7Z60

Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current 35* A ID ...

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SeekIC No. : 004378019 Detail

IRHM7Z60: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Package·Light WeightSpecific...

IRHM7Z60 Data Sheet

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Part Number:
IRHM7Z60
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Package
·Light Weight


Specifications

Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 35* A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 35*
IDM Pulsed Drain Current 140
PD @ TC = 25 Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 35 A
EAR Repetitive Avalanche Energy 25 mJ
dv/dt Peak Diode Recovery dv/dt 0.35 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 9.3 (Typical) g



Description

International Rectifier IRHM7Z60's RAD-Hard HEXFET® technology provides high performance power MOSFETs for space applications. This technology IRHM7Z60 has over a decade of proven performance and reliability in satellite applications. These devices IRHM7Z60 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM7Z60 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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