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IRHM7250SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 26 ...

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SeekIC No. : 004378011 Detail

IRHM7250SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecificat...

IRHM7250SE Data Sheet

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Part Number:
IRHM7250SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
26
A
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
16

IDM

 Pulsed Drain Current
104
PD @ TC = 25°C Max. Power Dissipation
150
W
  Linear Derating Factor
1.2
W/

VGS

 Gate-to-Source Voltage
±20
V

EAS

 Single Pulse Avalanche Energy
500
mJ

IAR

 Avalanche Current
26
A

EAR

 Repetitive Avalanche Energy
15
mJ

dv/dt

 Peak Diode Recovery dv/dt
5.9
V/ns

TJ
TSTG

 Operating Junction
Storage Temperature Range
-55 to 150
  Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight
9.3 (Typical)
g



Description

International Rectifier IRHM7250SE's RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs IRHM7250SE for space applications. This technology IRHM7250SE has over a decade of proven performance and reliability in satellite applications. These devices IRHM7250SE have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS (on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM7250SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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