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IRHM7250

Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Eyelets·Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25 Continuous Drain Current 26 A ID @...

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SeekIC No. : 004378010 Detail

IRHM7250: Features: ·Single Event Effect (SEE) Hardened·Low RDS(on)·Low Total Gate Charge·Proton Tolerant·Simple Drive Requirements·Ease of Paralleling·Hermetically Sealed·Ceramic Eyelets·Light WeightSpecific...

IRHM7250 Data Sheet

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Part Number:
IRHM7250
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Low RDS(on)
·Low Total Gate Charge
·Proton Tolerant
·Simple Drive Requirements
·Ease of Paralleling
·Hermetically Sealed
·Ceramic Eyelets
·Light Weight


Specifications

Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 26 A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 16
IDM Pulsed Drain Current 104
PD @ TC = 25 Max. Power Dissipation 150 W
Linear Derating Factor 1.2 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 26 A
EAR Repetitive Avalanche Energy 15 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 9.3 (Typical) g



Description

International Rectifier IRHM7250 's RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology IRHM7250   has over a decade of proven performance and reliability in satellite applications. These devices IRHM7250   have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rdson and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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