IRHM57264SE

Features:

· Single Event Effect (SEE) Hardened
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
· Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Electically Isolated
· Ceramic Eyelets
·Light Weight


Specifications

	Parameter		Units
ID @ VGS = 12V, TC = 25°C	Continuous Drain Current	35*	A
ID @ VGS = 12V, TC = 100°C	Continuous Drain Current	26
IDM	Pulsed Drain Current	140
PD @ TC = 25°C	Max. Power Dissipation	250	W
	Linear Derating Factor	2.0	W/
VGS	Gate-to-Source Voltage	±20	V
EAS	Single Pulse Avalanche Energy	500	mJ
IAR	Avalanche Current	35	A
EAR	Repetitive Avalanche Energy	25	mJ
dv/dt	Peak Diode Recovery dv/dt	5.0	V/ns
TJ TSTG	Operating Junction Storage Temperature Range	-55 to +150
	Storage Temperature Range	300 (0.063 in.(1.6 mm from case for 10s))
	Weight	9.3 ( Typical)	g

* Current is limited by internal wire diameter For footnotes refer to the last page


Description

International Rectifier IRHM57264SE's R^5TM technology provides high performance power MOSFETs for space applications. These devices IRHM57264SE have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R _DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM57264SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.