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IRHM57260

Features: ·Single Event Effect (SEE) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings·Simple Drive Requirements·Ease of Paralleling·Hermatically Sealed·Electically Isolated·Ceramic Eyelets·Light WeightSpecifications ...

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IRHM57260: Features: ·Single Event Effect (SEE) Hardened·Neutron Tolerant·Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings·Simple Drive Requirements·Ease of...

IRHM57260 Data Sheet

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Part Number:
IRHM57260
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

·Single Event Effect (SEE) Hardened
·Neutron Tolerant
·Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
·Simple Drive Requirements
·Ease of Paralleling
·Hermatically Sealed
·Electically Isolated
·Ceramic Eyelets
·Light Weight


Specifications

Parameter   Units
ID @ VGS = 12V, TC = 25 Continuous Drain Current 35* A
ID @ VGS = 12V, TC = 100 Continuous Drain Current 32
IDM Pulsed Drain Current 140
PD @ TC = 25 Max. Power Dissipation 250 W
Linear Derating Factor 2.0 W/
VGS Gate-to-Source Voltage ±20 V
EAS Single Pulse Avalanche Energy 500 mJ
IAR Avalanche Current 35 A
EAR Repetitive Avalanche Energy 25 mJ
dv/dt Peak Diode Recovery dv/dt 10 V/ns
TJ
TSTG		 Operating Junction
Storage Temperature Range		 -55 to 150
Lead Temperature 300 (0.063 in./1.6mm from case for 10s)
Weight 9.3 (Typical) g



Description

International Rectifier IRHM57260's R5TM technology provides high performance power MOSFETs for space applications. These devices IRHM57260 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHM57260 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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