Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light Weight· Complimentary P-Channel Available - IRHLUB7970Z4Specifications Parameter Units ID @ V...
IRHLUB770Z4: Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light Weight· ...
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Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Parameter | Units | ||
ID @ VGS = 4.5V, TC = 25°C | Continuous Drain Current | 0.8 | A |
ID @ VGS = 4.5V, TC = 100°C | Continuous Drain Current | 0.5 | |
IDM | Pulsed Drain Current ➀ | 3.2 | |
PD @ TC = 25°C | Max. Power Dissipation | 0.6 | W |
Linear Derating Factor | 0.0045 | W/°C | |
VGS | Gate-to-Source Voltage | ±10 | V |
EAS | Single Pulse Avalanche Energy ➁ | 2.0 | mJ |
IAR | Avalanche Current ➀ | 0.8 | A |
EAR | Repetitive Avalanche Energy ➀ | 0.06 | mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ | 4.0 | V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 | °C |
Lead Temperature | 300 (for 5s) | ||
Weight | 43 (Typical) | mg |