Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light Weight· Complimentary N-Channel Available -IRHLF670Z4Specifications Parameter Units ID @ ...
IRHLF6970Z4: Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light Weight· ...
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Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total G...
Parameter |
Units | ||
ID @ VGS = -4.5V, TC = 25°C | Continuous Drain Current |
-1.6 |
A |
ID @ VGS = -4.5V, TC = 100°C | Continuous Drain Current |
-1.0 | |
IDM |
Pulsed Drain Current |
-6.4 | |
PD @ TC = 25°C |
Max. Power Dissipation |
5.0 |
W |
Linear Derating Factor |
0.04 |
W/ | |
VGS |
Gate-to-Source Voltage |
±10 |
V |
EAS |
Single Pulse Avalanche Energy |
10 |
mJ |
IAR |
Avalanche Current |
-1.6 |
A |
EAR |
Repetitive Avalanche Energy |
0.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-4.0 |
V/ns |
TJ TSTG |
Operating Junction |
-55 to 150 |
|
Lead Temperature |
300 (0.63 in./1.6mm from case for 10s) | ||
Weight |
0.98 (Typical) |
g |
International Rectifier's R6TM Logic Level Power Mosfets IRHLF6970Z4 provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage IRHLF6970Z4 remains within accptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event
gate rupture and single event burnout immunity.
These devices IRHLF6970Z4 are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.