IRHLF6970Z4

Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light Weight· Complimentary N-Channel Available -IRHLF670Z4Specifications Parameter Units ID @ ...

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IRHLF6970Z4 Picture
SeekIC No. : 004377989 Detail

IRHLF6970Z4: Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light Weight· ...

floor Price/Ceiling Price

Part Number:
IRHLF6970Z4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

· 5V CMOS and TTL Compatible
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight
· Complimentary N-Channel Available -IRHLF670Z4



Specifications

 
Parameter
Units
ID @ VGS = -4.5V, TC = 25°C Continuous Drain Current
-1.6
A
ID @ VGS = -4.5V, TC = 100°C Continuous Drain Current
-1.0
IDM
Pulsed Drain Current
-6.4
PD @ TC = 25°C
Max. Power Dissipation
5.0
W
Linear Derating Factor
0.04
W/
VGS
Gate-to-Source Voltage
±10
V
EAS
Single Pulse Avalanche Energy
10
mJ
IAR
Avalanche Current
-1.6
A
EAR
Repetitive Avalanche Energy
0.5
mJ
dv/dt
Peak Diode Recovery dv/dt
-4.0
V/ns
TJ
TSTG

Operating Junction
Storage Temperature Range

-55 to 150
  Lead Temperature
300 (0.63 in./1.6mm from case for 10s)
  Weight
0.98 (Typical)
g



Description

International Rectifier's R6TM Logic Level Power Mosfets IRHLF6970Z4 provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage IRHLF6970Z4 remains within accptable operating limits over the full operating temperature and post radiation.This is achieved while maintaining single event
gate rupture and single event burnout immunity.

These devices IRHLF6970Z4 are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.




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