Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light Weight· Complimentary P-Channel Available - IRHLF6970Z4Specifications Parameter Units ID @ VGS ...
IRHLF670Z4: Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light Weight· ...
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Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total G...
· 5V CMOS and TTL Compatible
· Fast Switching
· Single Event Effect (SEE) Hardened
· Low Total Gate Charge
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight
· Complimentary P-Channel Available - IRHLF6970Z4
Parameter | Units | ||
ID @ VGS = 12V, TC = 25°C | Continuous Drain Current | 1.6 | A |
ID @ VGS = 12V, TC = 100°C | Continuous Drain Current | 1.0 | A |
IDM | Pulsed Drain Current | 6.4 | A |
PD @ TC = 25°C | Max. Power Dissipation | 5.0 | W |
Linear Derating Factor | 0.04 | W/°C | |
VGS | Gate-to-Source Voltage | ±10 | V |
EAS | Single Pulse Avalanche Energy | 9.0 | mJ |
IAR | Avalanche Current | 1.6 | A |
EAR | Repetitive Avalanche Energy | 0.5 | mJ |
dv/dt | Peak Diode Recovery dv/dt | 3.5 | V/ns |
TJ | Operating Junction | -55 to 150 | oC |
TSTG | Storage Temperature Range | oC | |
Pckg. Mounting Surface Temp. | 300 (0.063in/1.6mm from case for 10s) |
oC | |
Weight | 0.98 (Typical) | g |