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IRHLF77110

Features: 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically SealedLight WeightSpecifications Parameter Max. Units ID @VGS = -4.5V,TC = 25 Continuous Drain Current 6.0 ...

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IRHLF77110: Features: 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically SealedLight WeightSpecificatio...

IRHLF77110 Data Sheet

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Part Number:
IRHLF77110
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

5V CMOS and TTL Compatible
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
 Light Weight


Specifications

  Parameter
Max.
Units
ID @VGS = -4.5V,TC = 25
 Continuous Drain Current
6.0
A
ID @VGS = -4.5V,TC = 100
 Continuous Drain Current
3.7
IDM
 Pulsed Drain Current
24
PD @TC = 25
 Max. Power Dissipation
13
W
 Linear Derating Factor
0.18
W/
VGS
 Gate-to-Source Voltage
±10
V
EAS
 Single Pulse Avalanche Energy
43
mJ
IAR
 Avalanche Current
6.0
A
EAR
 Repetitive Avalanche Energy
2.3
mJ
dv/dt
 Peak Diode Recovery dv/dt
4.9
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp. 300 (0.063in/1.6mm from case for 10s)
  Weigh
0.98 (Typical))
g



Description

International Rectifier's R7TM Logic Level Power MOSFETs IRHLF77110 provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage IRHLF77110 remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.

These devices are used in applications of IRHLF77110 such as current boost low signal source in PWM, voltage comparator and operational amplifiers.




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