Features: 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface MountLight WeightSpecifications Parameter Max. Units ID @VGS = -4.5V,TC = 25 Con...
IRHLNA797064: Features: 5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Surface...
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Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Parameter |
Max. |
Units | |
ID @VGS = -4.5V,TC = 25 |
Continuous Drain Current |
-56* |
A |
ID @VGS = -4.5V,TC = 100 |
Continuous Drain Current |
-56* | |
IDM |
Pulsed Drain Current |
-224 | |
PD @TC = 25 |
Max. Power Dissipation |
250 |
W |
Linear Derating Factor |
2.0 |
W/ | |
VGS |
Gate-to-Source Voltage |
±10 |
V |
EAS |
Single Pulse Avalanche Energy |
1060 |
mJ |
IAR |
Avalanche Current |
-56 |
A |
EAR |
Repetitive Avalanche Energy |
25 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
-3.7 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Pckg. Mounting Surface Temp. |
300 (for 5s) | ||
Weigh |
3.3 (Typical) |
g |
International Rectifier's R7TM Logic Level Power MOSFETs IRHLNA797064 provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. The IRHLNA797064 is achieved while maintaining single event gate rupture and single event burnout immunity.
These devices IRHLNA797064 are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.