Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Surface Mount· Light WeightSpecifications Parameter Units ID @ VGS = 4.5V, TC = 25 ...
IRHLNA77064: Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low Total Gate Charge· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Packag...
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Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Parameter | Units | ||
ID @ VGS = 4.5V, TC = 25 | Continuous Drain Current |
56* |
A |
ID @ VGS = 4.5V, TC = 100 | Continuous Drain Current |
56* | |
IDM | Pulsed Drain Current |
224 | |
PD @ TC = 25 | Max. Power Dissipation |
250 |
W |
Linear Derating Factor |
2.0 |
W/ | |
VGS | Gate-to-Source Voltage |
±10 |
V |
EAS | Single Pulse Avalanche Energy |
402 |
mJ |
IAR | Avalanche Current |
56 |
A |
EAR | Repetitive Avalanche Energy |
25 |
mJ |
dv/dt | Peak Diode Recovery dv/dt |
6.9 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
|
Package Mounting Surface Temperature |
300 ( for 5s) | ||
Weight |
3.3 (Typical ) |
g |
International Rectifier's R7TM Logic Level Power MOSFETs IRHLNA77064 provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage IRHLNA77064 remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.
These devices are used in applications of IRHLNA77064 such as currentboost low signal source in PWM, voltage comparator and operational amplifiers.