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IRHLG770Z4

Features: 5V CMOS and TTL CompatibleFast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically SealedCeramic Package Light WeightComplimentary P-Channel Available - IRHLG7970Z4Specifications Parameter Max. Units ...

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SeekIC No. : 004377993 Detail

IRHLG770Z4: Features: 5V CMOS and TTL CompatibleFast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically SealedCeramic Package Light Wei...

IRHLG770Z4 Data Sheet

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Part Number:
IRHLG770Z4
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

 5V CMOS and TTL Compatible
 Fast Switching
  Single Event Effect (SEE) Hardened
  Low Total Gate Charge
  Simple Drive Requirements
  Ease of Paralleling
  Hermetically Sealed
 Ceramic Package
  Light Weight
 Complimentary P-Channel Available - IRHLG7970Z4


Specifications

  Parameter
Max.
Units
ID @VGS = -4.5V,TC = 25
 Continuous Drain Current
1.07
A
ID @VGS = -4.5V,TC = 100
 Continuous Drain Current
0.67
IDM
 Pulsed Drain Current
4.28
PD @TC = 25
 Max. Power Dissipation
1.0
W
 Linear Derating Factor
0.01
W/
VGS
 Gate-to-Source Voltage
±10
V
EAS
 Single Pulse Avalanche Energy
13
mJ
IAR
 Avalanche Current
1.07
A
EAR
 Repetitive Avalanche Energy
0.1
mJ
dv/dt
 Peak Diode Recovery dv/dt
7.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Pckg. Mounting Surface Temp. 300 (0.063in/1.6mm from case for 10s)
  Weigh
1.3 (Typical)
g



Description

International Rectifier's R7TM Logic Level Power MOSFETs IRHLG770Z4 provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage IRHLG770Z4 remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity.

These devices are used in applications of IRHLG770Z4 such as current boost low signal source in PWM, voltage comparator and operational amplifiers.




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