Features: 5V CMOS and TTL CompatibleFast SwitchingSingle Event Effect (SEE) HardenedLow Total Gate ChargeSimple Drive RequirementsEase of ParallelingHermetically SealedLight WeightComplimentary N-Channel Available - IRHLF770Z4Specifications Parameter Units ID @ VGS = -4.5V, TC = ...
IRHLF7970Z4: Features: 5V CMOS and TTL CompatibleFast SwitchingSingle Event Effect (SEE) HardenedLow Total Gate ChargeSimple Drive RequirementsEase of ParallelingHermetically SealedLight WeightComplimentary N-C...
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Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Features: · 5V CMOS and TTL Compatible· Fast Switching· Single Event Effect (SEE) Hardened· Low To...
Parameter |
Units | ||
ID @ VGS = -4.5V, TC = 25°C | Continuous Drain Current |
-1.6 |
A |
ID @ VGS = -4.5V, TC = 100°C | Continuous Drain Current |
-1.0 | |
IDM | Pulsed Drain Current ➀ |
-6.4 | |
PD @ TC = 25°C | Max. Power Dissipation |
5.0 |
W |
Linear Derating Factor |
0.04 |
W/°C | |
VGS | Gate-to-Source Voltage |
±10 |
V |
EAS | Single Pulse Avalanche Energy ➁ |
10 |
mJ |
IAR | Avalanche Current ➀ |
-1.6 |
A |
EAR | Repetitive Avalanche Energy ➀ |
0.5 |
mJ |
dv/dt | Peak Diode Recovery dv/dt ➂ |
-4.0 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to 150 |
oC |
Lead Temperature |
300 (0.063in/1.6mm from case for 10s) | ||
Weight |
0.98 ( Typical ) |
g |