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IRHF9230

Features: · Single Event Effect (SEE) Hardened· Low R DS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Cu...

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SeekIC No. : 004377979 Detail

IRHF9230: Features: · Single Event Effect (SEE) Hardened· Low R DS(on)· Low Total Gate Charge· Proton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Ceramic Package· Light Weig...

IRHF9230 Data Sheet

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Part Number:
IRHF9230
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Low R DS(on)
· Low Total Gate Charge
· Proton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Ceramic Package
· Light Weight


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
-4.0
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
-2.4
IDM
 Pulsed Drain Current
-16
PD @ TC = 25°C
 Max. Power Dissipation
25
W
 Linear Derating Factor
2.0
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
171
mJ
IAR
 Avalanche Current
-4.0
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
-27
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to +150
Storage Temperature Range
300 (0.063 in.(1.6 mm from case for 10s))
 Weight
0.98 ( Typical)
g

* For footnotes refer to the last page


Description

International Rectifier's RAD-Hard HEXFETTM technology IRHF9230 provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHF9230 have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R ds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF9230 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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