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IRHF57133SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter U...

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SeekIC No. : 004377962 Detail

IRHF57133SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions· Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Dr...

IRHF57133SE Data Sheet

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Part Number:
IRHF57133SE
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low RDS(on)
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
· Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current

10.5
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
6.5
IDM
 Pulsed Drain Current
42
PD @ TC = 25°C
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
164
mJ
IAR
 Avalanche Current
10.5
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
8.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight
0.98 (Typical)
g
For footnotes refer to the last page


Description

International Rectifier's R5TM technology IRHF57133SE provides high performance power MOSFETs for space applications. These devices IRHF57133SE  have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF57133SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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