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IRHF57034

Features: · Single Event Effect (SEE) Hardened· Ultra Low R DS(on)· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter U...

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SeekIC No. : 004377960 Detail

IRHF57034: Features: · Single Event Effect (SEE) Hardened· Ultra Low R DS(on)· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Dr...

IRHF57034 Data Sheet

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Part Number:
IRHF57034
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low R DS(on)
· Neutron Tolerant
· Identical Pre- and Post-Electrical Test Conditions
·Repetitive Avalanche Ratings
·Dynamic dv/dt Ratings
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
12*
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
10
IDM
 Pulsed Drain Current
48
PD @ TC = 25°C
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
270
mJ
IAR
 Avalanche Current
12
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
9.3
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to +150
Storage Temperature Range
300 (0.063 in.(1.6 mm from case for 10s))
 Weight
0.98 ( Typical)
g

* Current is limited by internal wire diameter




Description

International Rectifier's R5TM technology IRHF57034 provides high performance power MOSFETs for space applications. These devices IRHF57034 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF57034 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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