Features: · Single Event Effect (SEE) Hardened· Ultra Low R DS(on)· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Drive Requirements· Ease of Paralleling· Hermetically SealedSpecifications Parameter U...
IRHF57034: Features: · Single Event Effect (SEE) Hardened· Ultra Low R DS(on)· Neutron Tolerant· Identical Pre- and Post-Electrical Test Conditions·Repetitive Avalanche Ratings·Dynamic dv/dt Ratings· Simple Dr...
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Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Neutron Tolerant· Identical Pre...
Features: ·Single Event Effect (SEE) Hardened·Ultra Low RDS(on)·Identical Pre- and Post-Electrical...
Parameter |
Units | ||
ID @ VGS = 12V, TC = 25°C |
Continuous Drain Current |
12* |
A |
ID @ VGS = 12V, TC = 100°C |
Continuous Drain Current |
10 | |
IDM |
Pulsed Drain Current |
48 | |
PD @ TC = 25°C |
Max. Power Dissipation |
25 |
W |
Linear Derating Factor |
0.2 |
W/ | |
VGS |
Gate-to-Source Voltage |
±20 |
V |
EAS |
Single Pulse Avalanche Energy |
270 |
mJ |
IAR |
Avalanche Current |
12 |
A |
EAR |
Repetitive Avalanche Energy |
2.5 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
9.3 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to +150 |
|
Storage Temperature Range |
300 (0.063 in.(1.6 mm from case for 10s)) | ||
Weight |
0.98 ( Typical) |
g |
* Current is limited by internal wire diameter
International Rectifier's R5TM technology IRHF57034 provides high performance power MOSFETs for space applications. These devices IRHF57034 have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2)). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF57034 retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.