Position: Home  > All Categories> Integrated Circuits (ICs) > IRHF7430SE

IRHF7430SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low R DS(on)· Low Total Gate Charge· Neuton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 2....

product image

IRHF7430SE Picture
See larger image
SeekIC No. : 004377976 Detail

IRHF7430SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low R DS(on)· Low Total Gate Charge· Neuton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifica...

IRHF7430SE Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
IRHF7430SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/17

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low R DS(on)
· Low Total Gate Charge
· Neuton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
2.6
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
1.6
IDM
 Pulsed Drain Current
10.4
PD @ TC = 25°C
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
148
mJ
IAR
 Avalanche Current
2.6
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
8.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight
0.98 (Typical)
g



Description

International Rectifier's RADHardTM HEXFET® MOSFET technology IRHF7430SE provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHF7430SE have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF7430SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Batteries, Chargers, Holders
ICR18650-28A
ICR18650-26F/h
Test Equipment
TOP853
TOP2005
LED Products
LM24P20
KCG057QV1DB-G770
Undefined Category
VI-B63-IU
X27 589
Switches
US32DMRJ
HBGQ22P-11ET
Circuit Protection
A50QS75-4Y
F-17*77
View more