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IRHF7430SE

Features: · Single Event Effect (SEE) Hardened· Ultra Low R DS(on)· Low Total Gate Charge· Neuton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifications Parameter Units ID @ VGS = 12V, TC = 25°C Continuous Drain Current 2....

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SeekIC No. : 004377976 Detail

IRHF7430SE: Features: · Single Event Effect (SEE) Hardened· Ultra Low R DS(on)· Low Total Gate Charge· Neuton Tolerant· Simple Drive Requirements· Ease of Paralleling· Hermetically Sealed· Light WeightSpecifica...

IRHF7430SE Data Sheet

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Part Number:
IRHF7430SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

· Single Event Effect (SEE) Hardened
· Ultra Low R DS(on)
· Low Total Gate Charge
· Neuton Tolerant
· Simple Drive Requirements
· Ease of Paralleling
· Hermetically Sealed
· Light Weight


Specifications

 
Parameter
Units
ID @ VGS = 12V, TC = 25°C
 Continuous Drain Current
2.6
A
ID @ VGS = 12V, TC = 100°C
 Continuous Drain Current
1.6
IDM
 Pulsed Drain Current
10.4
PD @ TC = 25°C
 Max. Power Dissipation
25
W
 Linear Derating Factor
0.2
W/
VGS
 Gate-to-Source Voltage
±20
V
EAS
 Single Pulse Avalanche Energy
148
mJ
IAR
 Avalanche Current
2.6
A
EAR
 Repetitive Avalanche Energy
2.5
mJ
dv/dt
 Peak Diode Recovery dv/dt
8.0
V/ns
TJ
TSTG
 Operating Junction
Storage Temperature Range
-55 to 150
Lead Temperature
300 (0.063 in. (1.6mm) from case for 10 sec.)
  Weight
0.98 (Typical)
g



Description

International Rectifier's RADHardTM HEXFET® MOSFET technology IRHF7430SE provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices IRHF7430SE have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low R DS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices IRHF7430SE retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.




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