IRHF7330SE

DescriptionThe IRHF7330SE is a kind of International rectifier, providing high performance power MOSFETs for space applications. It is available in TO-205AF package. It has some featuresof IRHF7330SEas follows. (1) single event effect handed; (2) ultra low RDS(on); (3) low total gate charge; (4) ...

product image

IRHF7330SE Picture
SeekIC No. : 004377975 Detail

IRHF7330SE: DescriptionThe IRHF7330SE is a kind of International rectifier, providing high performance power MOSFETs for space applications. It is available in TO-205AF package. It has some featuresof IRHF7330...

floor Price/Ceiling Price

Part Number:
IRHF7330SE
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Description

The IRHF7330SE is a kind of International rectifier, providing high performance power MOSFETs for space applications. It is available in TO-205AF package.

It has some features of IRHF7330SE as follows. (1) single event effect handed; (2) ultra low RDS(on); (3) low total gate charge; (4) proton tolerant; (5) simple drive requirements; (6) ease of parelleling; (7) hermetically sealed; (8) cemaric package; (9) light weight.

The following is about IRHF7330SE's absolute maximum ratings. (1): continuous drain current is 3.0 A at TC is 25 and is 1.9 A at TC is 100 . (2): power dissipation is 25 W at TC is 25 ; (3): single pulse avalanche energy is 140 mJ; (4): repetitive avalanche energy is 2.5 mJ; (5): junction and storage temperature are from -55 to 175 ; (6): soldering temperature for 10 seconds is 300 . Then is about the electrical characteristics at TJ is 25 . (1): the minimum drain-to-source breakdown voltage is 400 V when VGS is 0 V and ID is 250 A; (2): the maximum turn-on delay time is 35 ns, rise time is 62 ns, turn-off delay time is 58 ns and fall time is 58 ns at VDD is 200 V and ID is 3.0 A; (3): the typical input capacitance is 555 pF, output capacitance is 160 pF and reverse transfer capacitance is 60 pF when VDS is 25 V and f is 1.0 MHz.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Circuit Protection
Integrated Circuits (ICs)
Boxes, Enclosures, Racks
View more